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  MUR1520 high power products features ? ultrafast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? designed and qualified for industrial level description/applications mur.. series are the state of the art ultrafast recovery rectifiers specifically designe d with optimized performance of forward voltage drop and ultrafast recovery time. the planar structure and the plat inum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for us e in the output rectification stage of smps, ups, dc-to-dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. absolute maximum ratings parameter symbol test conditions max. units peak repetitive reverse voltage v rrm 200 v average rectified forward current i f(av) total device, rated v r , t c = 150 c 15 a non-repetitive peak surge current i fsm 200 peak repetitive forward current i fm rated v r , square wave, 20 khz, t c = 150 c 30 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 15 a - - 1.05 i f = 15 a, t j = 150 c - - 0.85 reverse leakage current i r v r = v r rated - - 10 a t j = 150 c, v r = v r rated - - 500 junction capacitance c t v r = 200 v - 55 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh http://www.luguang.cn email:lge@luguang.cn 1 2 10.2 0.2 2.8 0 . 1 1 9 .0 0 .5 pin 3.5 0 . 3 0.9 0 . 1 5.0 0.1 13 .8 0 .5 2 . 6 0. 2 0.5 0.1 8. 9 0.2 1.4 0.2 4 . 5 0. 2 |? 3 . 8 0 . 1 5 to-220ac dimensions in millimeters
dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - - 35 ns t j = 25 c i f = 15 a di f /dt = 200 a/s v r = 160 v -2 2- t j = 125 c - 39 - peak recovery current i rrm t j = 25 c - 1.6 - a t j = 125 c - 4.1 - reverse recovery charge q rr t j = 25 c - 19 - nc t j = 125 c - 90 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case r thjc --1 . 5 c/w thermal resistance, junction to ambient r thja --5 0 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-220ac MUR1520 http://www.luguang.cn email:lge@luguang.cn MUR1520
fig. 1 - typical forward voltage dr op characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction c apacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 175 c t j = 150 c t j = 25 c 0 1.5 0.6 0.9 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.3 1.2 0.1 0.01 0.1 1 10 100 0 100 150 v r - reverse voltage (v) i r - reverse current (a) t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c 1000 200 250 50 100 1000 0 10 100 1000 10 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 0.01 0.1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 1 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 http://www.luguang.cn email:lge@luguang.cn MUR1520
fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0510 allowable case temperature (c) i f(av) - average forward current (a) 160 170 180 see note (1) 150 dc 140 130 15 20 25 square wave (d = 0.50) rated v r applied 0 5 15 25 average power loss (w) i f(av) - average forward current (a) 0 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 10 20 5 10 25 15 20 rms limit 100 1000 t rr (ns) di f /dt (a/s) 20 i f = 30 a i f = 15 a i f = 8 a 60 40 v r = 160 v t j = 125 c t j = 25 c 30 50 10 100 1000 q rr (nc) di f /dt (a/s) 40 i f = 30 a i f = 15 a i f = 8 a 200 120 v r = 160 v t j = 125 c t j = 25 c 80 160 0 http://www.luguang.cn email:lge@luguang.cn MUR1520


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